View IRFI1010NPBF_1128881.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95418
IRFI1010NPBF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET(R) Power MOSFET VDSS = 55V RDS(on) = 0.012
D
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
TO-220 FULLP AK
Absolute Maximum Ratings
Max.
49 35 290 58 0.38 20 360 43 5.8 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.

Max.
2.6 65
Units
C/W 06/16/04
IRFI1010NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 55 2.0 30
Typ. 0.06 11 66 40 46 4.5 7.5 2900 880 330 12
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.012 VGS = 10V, ID = 26A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 43A 23 nC VDS = 44V 53 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 43A ns RG = 3.6 RD = 0.62, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V VDS = 25V pF = 1.0MHz, See Fig. 5 = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 81 240 49 A 290 1.3 120 370 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V TJ = 25C, IF = 43A di/dt = 100A/s
D
S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF1010N data and test conditions
VDD = 25V, starting TJ = 25C, L = 390H
RG = 25, IAS = 43A. (See Figure 12)
ISD 43A, di/dt 260A/s, VDD V(BR)DSS,
T J 175C
IRFI1010NPBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V 20s PULSE WIDTH TC = 175C
1 10 100
4.5V
10 0.1 1
20s PULSE WIDTH TC = 25C
10
A
100
10 0.1
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 72A
I D , Drain-to-Source Current (A)
2.5
TJ = 25C
100
TJ = 175C
2.0
1.5
10
1.0
0.5
1 4 5 6 7
V DS = 25V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI1010NPBF
5000
4000
3000
Coss
2000
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd
20
I D = 43A V DS = 44V V DS = 28V
16
C, Capacitance (pF)
12
8
Crss
1000
4
0 1 10 100
A
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120 140
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
10s 100 100s
100
TJ = 175C TJ = 25C
I D , Drain Current (A)
1ms 10 10ms
10 0.4 0.8 1.2 1.6 2.0
VGS = 0V
2.4
A
1 1
TC = 25C TJ = 175C Single Pulse
10
A
100
2.8
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI1010NPBF
50
V DS VGS
RD
40
RG 10V
D.U.T.
+
ID , Drain Current (A)
-VDD
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI1010NPBF
EAS , Single Pulse Avalanche Energy (mJ)
1000
15V
TOP
800
BOTTOM
ID 18A 31A 43A
VDS
L
DRIVER
600
RG
20V
D.U.T
IAS tp
+ V - DD
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0
VDD = 25V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI1010NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFI1010NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT COD E
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
DAT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRFI1010NPBF

	To Download IRFI1010NPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .